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MOSFET - Power, Single N-Channel, DUAL COOL), DFN8 5x6
40 V, 0.85 mW, 313 A
NTMFSC0D9N04CL
Features
• Advanced Dual−Sided Cooled Packaging • Ultra Low RDS(on) to Minimize Conduction Losses • MSL1 Robust Packaging Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Note 2)
Power Dissipation RqJC (Note 2)
ID
Steady State
TC = 25°C
PD
313
A
167 W
Continuous Drain Current RqJA (Note 1, 2)
Power Dissipation RqJA (Note 1, 2)
ID
Steady State
TA = 25°C
PD
49.5 A
3.
NTMFSC0D9N04CL Datasheet
