NTMS4840N - Power MOSFET

Features

www. DataSheet4U. com 30 V, 7.5 A, Single N.
Channel, SOIC.
8.
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC.
8 Surface Mount Package Saves Board Space These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com V(BR)DSS 30 V RDS(on) Max 24 mW @ 10 V 36 mW @ 4.5 V ID Max 7.5 A.

ON Semiconductor

Datasheet Details

Part number	NTMS4840N
Manufacturer	ON Semiconductor
File Size	154.51 KB
Description	Power MOSFET
Datasheet	NTMS4840N Datasheet
Additional preview pages of the NTMS4840N datasheet.

📁 Similar Datasheet

NTMS4101PR2G - P-Channel 20V MOSFET (VBsemi)
NTMS10P02R2 - P-Channel MOSFET (ETC)
NTM164M21 - LCD (ETC)
NTM164M21C - LCD (ETC)
NTM88H025S - Tire pressure monitor sensor (NXP)
NTM88H055S - Tire pressure monitor sensor (NXP)
NTM88H065S - Tire pressure monitor sensor (NXP)
NTM88H075S - Tire pressure monitor sensor (NXP)
NTM88H125S - Tire pressure monitor sensor (NXP)
NTM88H135S - Tire pressure monitor sensor (NXP)

Other Datasheets by ON Semiconductor

NTMS4800N - Power MOSFET
NTMS4801N - N-Channel Power MOSFET
NTMS4802N - Power MOSFET
NTMS4807N - Power MOSFET
NTMS4816N - Power MOSFET
NTMS4872N - Power MOSFET
NTMS4873NF - Power MOSFET
NTMS4107N - Power MOSFET

Full PDF Text Transcription

Click to expand full text

NTMS4840N Power MOSFET Features www.DataSheet4U.com 30 V, 7.5 A, Single N−Channel, SOIC−8 • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(on) Max 24 mW @ 10 V 36 mW @ 4.5 V ID Max 7.

Published: Mar 1, 2010 |