NTMS4N01R2 Datasheet | onsemi

Features - High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency - Miniature SO- 8 Surface Mount Package Saving Board Space; Mounting Information for the SO- 8 Package is Provided - IDSS Specified at Elevated Temperature - Drain- to- Source Avalanche Energy Specified - Diode Exhibits High Speed, Soft Recovery - Pb- Free Package is Available Applications - Power Management in Portable and Battery- Powered Products, i.e.: puters, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 m W) Gate- to- Source Voltage - Continuous Thermal Resistance, Junction- to- Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction- to- Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction- to- Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 7.5 Apk, L = 6 m H, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VDGR VGS Rq JA PD ID ID IDM Rq JA PD ID ID IDM Rq JA PD ID ID IDM TJ, Tstg EAS 20 20 ±10 50 2.5 5.9 4.7 25 100 1.25 4.2 3.3 20 162 0.77 3.3 2.6 15 - 55 to +150 169 °C/W W A A A °C/W W A A A °C/W W A A A °C m...