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NTMS4P01R2 - Power MOSFET

Key Features

  • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency.
  • Miniature SO.
  • 8 Surface Mount Package.
  • Saves Board Space.
  • Diode Exhibits High Speed with Soft Recovery.
  • IDSS Specified at Elevated Temperature.
  • Drain.
  • to.
  • Source Avalanche Energy Specified.
  • Mounting Information for the SO.
  • 8 Package is Provided.

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NTMS4P01R2 Power MOSFET −4.5 Amps, −12 Volts P−Channel Enhancement−Mode Single SO−8 Package Features • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Exhibits High Speed with Soft Recovery • IDSS Specified at Elevated Temperature • Drain−to−Source Avalanche Energy Specified • Mounting Information for the SO−8 Package is Provided Applications • Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS Please See the Table on the Following Page http://onsemi.com VDSS −12 V RDS(ON) TYP 30 mΩ @ −4.5 V ID MAX −4.5 A Single P−Channel D G S 8 1 SO−8 CASE 751 STYLE 13 MARKING DIAGRAM & PIN ASSIGNMENT N.C.