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NTP13N10 - Power MOSFET

Key Features

  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete.
  • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb.
  • Free Package is Available VDSS 100 V http://onsemi. com RDS(ON) TYP 165 mΩ @ 10 V N.
  • Channel D ID MAX 13 A Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available VDSS 100 V http://onsemi.com RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.