Datasheet Summary
Preferred Device
Power MOSFET
13 A, 100 V, N- Channel Enhancement- Mode TO- 220
Features
- Source- to- Drain Diode Recovery Time parable to a Discrete
- -
- Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb- Free Package is Available
VDSS 100 V http://onsemi.
RDS(ON) TYP 165 mΩ @ 10 V N- Channel D ID MAX 13 A
Typical Applications
- PWM Motor Controls
- Power Supplies
- Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Drain- to- Source Voltage (RGS = 1.0 MΩ) Gate- to- Source Voltage
- Continuous
- Non- Repetitive (tpv10 ms) Drain Current
- Continuous @ TA 25°C
- Continuous @ TA 100°C
-...