Datasheet Summary
NTB6412AN, NTP6412AN, NVB6412AN
N-Channel Power MOSFET 100 V, 58 A, 18.2 mW
Features
- Low RDS(on)
- High Current Capability
- 100% Avalanche Tested
- NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- Continuous
$20
Continuous Drain Cur- Steady TC = 25°C
ID rent RqJC
State TC = 100°C
Power Dissipation RqJC
Steady TC = 25°C
State
Pulsed Drain Current tp = 10...