NTPF095N65S3H - N-Channel Power MOSFET

onsemi

General Description

super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

700 V @ TJ = 150°C.
Typ. RDS(on) = 77 mW.
Ultra Low Gate Charge (Typ. Qg = 58 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 522 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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NTPF095N65S3H n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NTPF095N65S3H
Manufacturer	onsemi
File Size	211.94 KB
Description	N-Channel Power MOSFET
Datasheet	NTPF095N65S3H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 95 mW, 30 A NTPF095N65S3H Description SUPERFET III MOSFET is onsemi’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 77 mW • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Effective Output Capacitance (Typ. Coss(eff.