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NTR3A085PZ - P-Channel Power MOSFET

Key Features

  • Leading.
  • 20 V Trench for Low RDS(on).
  • 1.8 V Rated for Low Voltage Gate Drive.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number NTR3A085PZ
Manufacturer onsemi
File Size 196.60 KB
Description P-Channel Power MOSFET
Datasheet download datasheet NTR3A085PZ Datasheet

Full PDF Text Transcription for NTR3A085PZ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTR3A085PZ. For precise diagrams, and layout, please refer to the original PDF.

NTR3A085PZ MOSFET – Power, Single P-Channel, SOT-23 -20 V, -2.7 A Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • These Device...

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r Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Power Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −2.5 A −1.8 t ≤ 10 s TA = 25°C −2.7 Power Dissipation (Note 1) Steady TA = 25°C PD State 0.72 W t ≤ 10 s 0.81 Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady TA = 25°C ID State TA = 85°C TA = 25°C PD −1.9 A −1.4 0.

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