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MOSFET – Power, Single, P-Channel, SC-70
-8.0 V, -1.4 A
NTS2101P
Features
• Leading Trench Technology for Low RDS(on) Extending Battery Life • −1.8 V Rated for Low Voltage Gate Drive
• SC−70 Surface Mount for Small Footprint (2 x 2 mm)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s Steady State
TA = 25°C TA = 70°C TA = 25°C TA = 25°C
VDSS VGS ID
PD
−8.0 ±8.0 −1.4 −1.1 −1.5 0.29
t≤5s
0.
NTS2101P Datasheet
