NTT2012N065M3S Description
Silicon Carbide (SiC) MOSFET EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK NTT2012N065M3S.
NTT2012N065M3S Key Features
- Typical RDS(on) = 12.7 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 135 nC)
- High Speed Switching with Low Capacitance (Coss = 281 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a