Datasheet Details
| Part number | NTT2012N065M3S |
|---|---|
| Manufacturer | onsemi |
| File Size | 180.73 KB |
| Description | SiC MOSFET |
| Datasheet |
 NTT2012N065M3S Datasheet
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Key Features
- Typical RDS(on) = 12.7 mW @ VGS = 18 V.
- Ultra Low Gate Charge (QG(tot) = 135 nC).
- High Speed Switching with Low Capacitance (Coss = 281 pF).
- 100% Avalanche Tested.
- This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection).