NTT2012N065M3S
NTT2012N065M3S is SiC MOSFET manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK
Features
- Typical RDS(on) = 12.7 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 135 nC)
- High Speed Switching with Low Capacitance (Coss = 281 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a,
Pb-Free 2LI (on second level interconnection)
Applications
- SMPS, Solar Inverters, UPS, Energy Storage, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
- 10/+22 V
Continuous Drain Current
TC = 25 °C
Power...
