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NTT2012N065M3S Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK.

Key Features

  • Typical RDS(on) = 12.7 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 135 nC).
  • High Speed Switching with Low Capacitance (Coss = 281 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection).

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