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NTT2023N065M3S - SiC MOSFET

Features

  • Typ. RDS(on) = 23 mW @ VGS = 18 V.
  • Low Effective Output Capacitance.
  • Ultra Low Gate Charge.
  • 100% UIS Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection).

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Datasheet preview – NTT2023N065M3S

Datasheet Details

Part number NTT2023N065M3S
Manufacturer onsemi
File Size 175.23 KB
Description SiC MOSFET
Datasheet download datasheet NTT2023N065M3S Datasheet
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Full PDF Text Transcription

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Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, T2PAK NTT2023N065M3S Features • Typ.
Published: |