Datasheet Details
| Part number | NTT2023N065M3S |
|---|---|
| Manufacturer | onsemi |
| File Size | 175.23 KB |
| Description | SiC MOSFET |
| Datasheet |
 NTT2023N065M3S Datasheet
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Key Features
- Typ. RDS(on) = 23 mW @ VGS = 18 V.
- Low Effective Output Capacitance.
- Ultra Low Gate Charge.
- 100% UIS Tested.
- This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection).