NTT2023N065M3S
NTT2023N065M3S is SiC MOSFET manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 23 mohm, 650 V, M3S, T2PAK
Features
- Typ. RDS(on) = 23 mW @ VGS = 18 V
- Low Effective Output Capacitance
- Ultra Low Gate Charge
- 100% UIS Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a,
Pb-Free 2LI (on second level interconnection) Applications
- SMPS, Solar Inverters, UPS, Energy Storage, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
- 8/+22 V
Continuous Drain Current
TC = 25 °C
Power Dissipation
288 W
Continuous Drain Current
TC = 100...
