NTT2023N065M3S Description
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, T2PAK NTT2023N065M3S.
NTT2023N065M3S Key Features
- Typ. RDS(on) = 23 mW @ VGS = 18 V
- Low Effective Output Capacitance
- Ultra Low Gate Charge
- 100% UIS Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a