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NTTFD021N08C - N-Channel MOSFET

Datasheet Summary

Description

This device includes two specialized N

dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A.
  • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N.
  • Channel.
  • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A.
  • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • RoHS Compliant.

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Datasheet Details

Part number NTTFD021N08C
Manufacturer ON Semiconductor
File Size 410.86 KB
Description N-Channel MOSFET
Datasheet download datasheet NTTFD021N08C Datasheet
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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 80 V, 21 mW, 24 A NTTFD021N08C V(BR)DSS 80 V RDS(ON) MAX 21 mW @ 10 V 55 mW @ 6 V ID MAX 24 A General Description This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N−Channel • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.
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