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NTTFD021N08C - N-Channel MOSFET

General Description

This device includes two specialized N

dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A.
  • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N.
  • Channel.
  • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A.
  • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 80 V, 21 mW, 24 A NTTFD021N08C V(BR)DSS 80 V RDS(ON) MAX 21 mW @ 10 V 55 mW @ 6 V ID MAX 24 A General Description This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N−Channel • Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A • Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.