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MOSFET - Power, N-Channel, PowerTrench[ Power Clip, Symmetric Dual
30 V
NTTFD2D8N03P1E
Features
• Small Footprint (3.3mm x 3.3mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• DC−DC Converters • System Voltage Rails
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Q1
Q2 Unit
Drain−to−Source Voltage Gate−to−Source Voltage
VDSS
30
30
V
VGS +16 +16 V −12 −12
Continuous Drain
TC = 25°C
ID
Current RqJC (Note 3)
Steady TC = 85°C
State
Power Dissipation RqJC (Note 3)
TA = 25°C
PD
80 80 A 58 58 26 26 W
Continuous Drain
TA = 25°C
ID
21.1 21.1 A
Current RqJA (Notes 1, 3)
Steady TA = 85°C
15.2 15.
NTTFD2D8N03P1E Datasheet
