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NTTFS012N10MD - N-Channel Power MOSFET

Key Features

  • Shielded Gate MOSFET Technology.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • Low QRR, Soft Recovery Body Diode.
  • Low QOSS to Improve Light Load Efficiency.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, Single N-Channel 100 V, 14.