Datasheet Summary
NTTFS3A08P Product Preview Power MOSFET
Features
- 20 V,
- 14 A, Single P- Channel, m8FL
- Ultra Low RDS(on) to Minimize Conduction Losses
- m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
- ESD Protection Level of 5 kV per JESD22- A114
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications http://onsemi.
V(BR)DSS
- 20 V RDS(on) MAX 6.7 mW @
- 4.5 V 9.0 mW @
- 2.5 V P- Channel MOSFET ID MAX
- 14 A
Conduction
- Battery/Switch
- High Side Load Switch
- Optimized for Power Management Applications for Portable
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current RqJA...