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NTTFS3A08P - Power MOSFET

Features

  • 20 V,.
  • 14 A, Single P.
  • Channel, m8FL.
  • Ultra Low RDS(on) to Minimize Conduction Losses.
  • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal.
  • ESD Protection Level of 5 kV per JESD22.
  • A114.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

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NTTFS3A08P Product Preview Power MOSFET Features −20 V, −14 A, Single P−Channel, m8FL • Ultra Low RDS(on) to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal • ESD Protection Level of 5 kV per JESD22−A114 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS −20 V RDS(on) MAX 6.7 mW @ −4.5 V 9.0 mW @ −2.
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