Datasheet Summary
MOSFET
- Power, Single, N-Channel, WDFN8
30 V, 64 A
Features
- Integrated Schottky Diode
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- These Devices are Pb- Free and are RoHS pliant
Applications
- CPU Power Delivery
- Synchronous Rectification for DC- DC Converters
- Low Side Switching
- Tele Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
TA = 25°C TA = 85°C TA = 25°C
VDSS VGS ID
30 ±20 22 15.9...