NTTFS4C05NTWG Datasheet | onsemi

NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N- Channel, m8FL - - - - Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant http://onsemi. V(BR)DSS 30 V RDS(on) MAX 3.6 m W @ 10 V 5.1 m W @ 4.5 V N- Channel MOSFET ID MAX 75 A Applications - DC- DC Converters - Power Load Switch - Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA ≤ 10 s (Note 1) Power Dissipation Rq JA ≤ 10 s (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) Power Dissipation Rq JC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, Tstg IS d V/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 19.4 14.5 2.16 28 21 4.5 12.0 8.9 0.82 75 56 33 174 - 55 to +150 30 6.0 84 W A °C A V/ns m J W A W A W Unit V V A D (5- 8) G (4) S (1,2,3) A MARKING DIAGRAM WDFN8 (m8FL) CASE 511AB 4C05 A Y WW G 1 S S S G 4C05 AYWWG G = Specific Device Code = Assembly Location = Year = Work Week = Pb- Free Package (Note: Microdot may be in either location) Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d V/dt Single Pulse Drain- to- Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 41 Apk, L = 0.1 m H, RG = 25 W) (Note 3) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ORDERING INFORMATION Device NTTFS4C05NTAG NTTFS4C05NTWG Package WDFN8 (Pb- Free) WDFN8 (Pb- Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel °C Stresses exceeding Maximum Ratings may damage the device....