NTTFS4C02N Description
MOSFET Power, Single, N‐Channel, m8FL 30 V, 164 A NTTFS4C02N.
NTTFS4C02N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- ESD Protection Level: CDM > 1 kV
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS