NTTFS4H05N Datasheet | onsemi

MOSFET - Power, Single, N-Channel, m8-FL 25 V, 94 A Features - Optimized Design to Minimize Conduction and Switching Losses - Optimized Package to Minimize Parasitic Inductances - Optimized material for improved thermal performance - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Applications - High Performance DC-DC Converters - System Voltage Rails - Net, Tele - Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Rq JA (TA = 25°C, Note 1) Power Dissipation Rq JA (TA = 25°C, Note 1) VDSS ±20 Continuous Drain Current Rq JC (TC = 25°C, Note 1) Power Dissipation Rq JC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 41 Apk, L = 0.1 m H) (Note 3) Drain to Source d V/dt 84 m J d V/dt V/ns Maximum Junction Temperature Storage Temperature Range TJ(max) °C...