NTTFS8D1N08H Description
This N−Channel MOSFET is produced using onsemi’s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
NTTFS8D1N08H Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 8.3 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 12.6 mW at VGS = 6 V, ID = 13 A
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant