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NTTFS8D1N08H - N-Channel Power MOSFET

General Description

This N

MOSFET process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 8.3 mW at VGS = 10 V, ID = 16 A.
  • Max RDS(on) = 12.6 mW at VGS = 6 V, ID = 13 A.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.3 mW, 61 A NTTFS8D1N08H General Description This N−Channel MOSFET is produced using onsemi’s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features  Shielded Gate MOSFET Technology  Max RDS(on) = 8.3 mW at VGS = 10 V, ID = 16 A  Max RDS(on) = 12.6 mW at VGS = 6 V, ID = 13 A  Lowers Switching Noise/EMI  MSL1 Robust Package Design  100% UIL Tested  RoHS Compliant Applications  Primary DC−DC MOSFET  Synchronous Rectifier in DC−DC and AC−DC  Motor Drive DATA SHEET www.onsemi.