NTTFS8D1N08H Overview
Key Specifications
Description
This N-Channel MOSFET is produced using onsemi’s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 8.3 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 12.6 mW at VGS = 6 V, ID = 13 A
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
