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NTTFS8D1N08H Datasheet N-Channel Power MOSFET

Manufacturer: onsemi

Overview: MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.3 mW, 61 A NTTFS8D1N08H General.

General Description

This N−Channel MOSFET is produced using onsemi’s advanced MOSFET process that incorporates Shielded Gate technology.

This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 8.3 mW at VGS = 10 V, ID = 16 A.
  • Max RDS(on) = 12.6 mW at VGS = 6 V, ID = 13 A.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.

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