NTY100N10
NTY100N10 is manufactured by onsemi.
Preferred Device
Power MOSFET 123 A, 100 V N- Channel Enhancement- Mode TO264 Package
Features
- Source- to- Drain Diode Recovery Time parable to a Discrete
Fast Recovery Diode
- Avalanche Energy Specified
- IDSS and RDS(on) Specified at Elevated Temperature
- Pb- Free Package is Available-
Applications
- PWM Motor Control
- Power Supplies
- Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain- Source Voltage Drain- Gate Voltage (RGS = 1 MW) Gate- Source Voltage
- Continuous
- Non- Repetitive (tp v 10 ms) Drain Current (Note 1)
- Continuous @ TC = 25°C
- Pulsed Total Power Dissipation (Note 1) Derate above 25°C
VDSS VDGR
100 100
VGS...
