Datasheet Summary
NTZD3156C Small Signal MOSFET
20 V, 540 mA /
- 20 V,
- 430 mA plementary N- and P- Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection
Features
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ID Max (Note 1) 540 mA
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- Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage Integrated G- S Resistor on Both Devices ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb- Free Devices
V(BR)DSS N- Channel 20 V
RDS(on) Max 0.55 W @ 4.5 V 0.7 W @ 2.5 V 0.9 W @ 1.8 V 0.9 W @
- 4.5 V 1.2 W @
- 2.5 V 2.0 W @
- 1.8 V
P- Channel
- 20 V
- 430 mA
Applications
- Load/Power Switching with Level Shift
- Portable Electronic...