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NTZD3156C Small Signal MOSFET
20 V, 540 mA / −20 V, −430 mA Complementary N− and P−Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection
Features
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ID Max (Note 1) 540 mA
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Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage Integrated G−S Resistor on Both Devices ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices
V(BR)DSS N−Channel 20 V
RDS(on) Max 0.55 W @ 4.5 V 0.7 W @ 2.5 V 0.9 W @ 1.8 V 0.9 W @ −4.5 V 1.2 W @ −2.5 V 2.0 W @ −1.
NTZD3156C Datasheet
