NUS3045MN Datasheet PDF - ON Semiconductor Overvoltage Protection Specs

NUS3045MN - Overvoltage Protection

This page provides the datasheet information for the NUS3045MN, a member of the NUS2045MN Overvoltage Protection family.

Datasheet Summary

Description

This pin senses an external voltage point.

If the voltage on this input rises above the overvoltage threshold (VTH), the OUT pin will be driven to within 1.0 V of VCC, thus disconnecting the FET.

Features

OvervoltageTurn.
Off Time of Less Than 1.0 ms.
Accurate Voltage Threshold of 6.85 V, Nominal.
Undervoltage Lockout Protection; 2.8 V, Nominal.
Control Input Compatible with 1.8 V Logic Levels.
20 V or.
30 V Integrated P.
Channel Power MOSFET.
Low RDS(on) = 71 mW @.
4.5 V for NUS2045MN Low RDS(on) = 66 mW @.
4.5 V for NUS3045MN.
Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable.

Datasheet Details

Part number	NUS3045MN
Manufacturer	ON Semiconductor
File Size	125.72 KB
Description	Overvoltage Protection
Datasheet	NUS3045MN Datasheet
Additional preview pages of the NUS3045MN datasheet.

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NUS2045MN, NUS3045MN Overvoltage Protection IC with Integrated MOSFET These devices represent a new level of safety and integration by combining the NCP345 overvoltage protection circuit (OVP) with a 20 V P−channel power MOSFET (NUS2045MN) or with a 30 V P−channel power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any damage can occur. The OVP ICs are optimized for applications using an external AC−DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. They have a nominal overvoltage threshold of 6.

Published: Jan 17, 2007 |

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