NUS3045MN Datasheet | onsemi

NUS2045MN, NUS3045MN Overvoltage Protection IC with Integrated MOSFET These devices represent a new level of safety and integration by bining the NCP345 overvoltage protection circuit (OVP) with a 20 V P- channel power MOSFET (NUS2045MN) or with a 30 V P- channel power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any damage can occur. The OVP ICs are optimized for applications using an external AC- DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. They have a nominal overvoltage threshold of 6.85 V which makes them ideal for single cell Li- Ion as well as 3/4 cell Ni CD/Ni MH applications. Features - Overvoltage Turn- Off Time of Less Than 1.0 ms - Accurate Voltage Threshold of 6.85 V, Nominal - Undervoltage Lockout Protection; 2.8 V, Nominal - Control Input patible with 1.8 V Logic Levels - - 20 V or - 30 V Integrated P- Channel Power MOSFET - Low RDS(on) = 71 m W @ - 4.5 V for NUS2045MN Low RDS(on) = 66 m W @ - 4.5 V for NUS3045MN - Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable Applications - Maximum Solder Reflow temperature @ 235°C for MNT1 suffix and 260°C for MNT1G suffix - Pb- Free Packages are Available http://onsemi. 1 DFN8 CASE 506AL MARKING DIAGRAM 1 x045 AYWWG G x045 = Device Code x = 2 or 3 = Assembly Location = Year WW = Work Week = Pb- Free Package (Note: Microdot may be in either location) PIN...