NUS3055MUTAG Overview
Key Features
- OvervoltageTurn-Off Time of Less Than 1.0 ms
- Accurate Voltage Threshold of 6.85 V, Nominal
- Undervoltage Lockout Protection; 2.8 V, Nominal
- High Accuracy Undervoltage Threshold of 2.0%
- 30 V Integrated P-Channel Power MOSFET
- Low RDS(on) = 75 mW @ -4.5 V
- Low Profile 0.55 mm height, 2.5 X 3.0 mm LLGA Package Suitable for Portable Applications
- Maximum Solder Reflow Temperature @ 260°C
- This device is manufactured with a Pb-Free external lead finish only. Benefits
- Provide Battery Protection
