NUS3055MUTAG Datasheet | onsemi

Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by bining the NCP345 overvoltage protection circuit (OVP) with a 30 V P- channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any damage can occur. The OVP IC is optimized for applications that use an external AC- DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. It has a nominal overvoltage threshold of 6.85 V which makes them ideal for single cell Li- Ion as well as 3/4 cell Ni CD/Ni MH applications. Features - Overvoltage Turn- Off Time of Less Than 1.0 ms - Accurate Voltage Threshold of 6.85 V, Nominal - Undervoltage Lockout Protection; 2.8 V, Nominal - High Accuracy Undervoltage Threshold of 2.0% - - 30 V Integrated P- Channel Power MOSFET - Low RDS(on) = 75 m W @ - 4.5 V - Low Profile 0.55 mm height, 2.5 X 3.0 mm LLGA Package Suitable for Portable Applications - Maximum Solder Reflow Temperature @ 260°C - This device is manufactured with a Pb- Free external lead finish only. Benefits - Provide Battery Protection - Integrated Solution Offers Cost and Space Savings - Integrated Solution Improves System Reliability Applications - Portable puters and PDAs - Cell Phones and Handheld Products - Digital Cameras http://onsemi. MARKING DIAGRAM TLLGA8 XXXX CASE 517AH AYWW XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package PIN CONNECTIONS VCC 8 OUT 7 GATE 6 SRC 5 DRAIN...