NUS3116MT Overview
NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics.
NUS3116MT Key Features
- High Performance Power MOSFET
- Dual-Low Vce(sat) Transistors as Charging Power Mux
- 3.0x3.0x0.8 mm WDFN Package
- Independent Pin-out Provides Circuit Flexibility
- Low Profile (<0.8 mm) for Easy Fit in Thin Environments
- This is a Pb-Free Device
NUS3116MT Applications
- Main Switch and Battery Charging Mux for Portable Electronics
- Optimized for mercial PMUs from Top Suppliers (See Figure 2)