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NUS3116MT
Main Switch Power MOSFET and Dual Charging BJT
−12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package
This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics.
Features
• High Performance Power MOSFET • Dual−Low Vce(sat) Transistors as Charging Power Mux • 3.0x3.0x0.8 mm WDFN Package • Independent Pin−out Provides Circuit Flexibility • Low Profile (<0.8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device
Applications
• Main Switch and Battery Charging Mux for Portable Electronics • Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
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NUS3116MT Datasheet
