NUS5530MN - Integrated Power MOSFET

Datasheet Summary

Features

Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor).
Higher Efficiency Extending Battery Life.
Logic Level Gate Drive (MOSFET).
Performance DFN Package.
This is a Pb.
Free Device.

ON Semiconductor

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Datasheet Details

Part number	NUS5530MN
Manufacturer	ON Semiconductor
File Size	223.93 KB
Description	Integrated Power MOSFET
Datasheet	NUS5530MN Datasheet
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NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. Features • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package • This is a Pb−Free Device Applications • Power Management in Portable and Battery−Powered Products; i.e.

Published: Jan 17, 2007 |