NUS5530MN
NUS5530MN is Integrated Power MOSFET manufactured by onsemi.
Features
- Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive (MOSFET)
- Performance DFN Package
- This is a Pb- Free Device
Applications
- Power Management in Portable and Battery- Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS FOR P- CHANNEL FET (TA = 25°C unless otherwise noted)
Rating
Steady Symbol 5 sec State Unit
Drain- Source Voltage
Gate- Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Note 1)
- 20
"12
- 5.3
- 3.9
- 3.8
- 2.8
"20
- 5.3
- 3.9
Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C
Operating Junction and...
