NUS5530MN Description
NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by bining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
NUS5530MN Key Features
- Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive (MOSFET)
- Performance DFN Package
- This is a Pb-Free Device
NUS5530MN Applications
- Power Management in Portable and Battery−Powered Products; i.e