Datasheet Summary
NTB5860N, NTP5860N, NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
- Low RDS(on)
- High Current Capability
- 100% Avalanche Tested
- These Devices are Pb- Free, Halogen Free and are RoHS pliant
- NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain- to- Source Voltage
Gate- to- Source Voltage
- Continuous
Continuous Drain Current, RqJC
Steady State
TC = 25°C TC = 100°C
Power Dissipation, RqJC
Steady State
TC = 25°C
Pulsed Drain Current tp = 10 ms
Current Limited by Package
Operating and...