NVBG020N120SC1 Overview
Silicon Carbide (SiC) MOSFET 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1.
NVBG020N120SC1 Key Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (typ. QG(tot) = 220 nC)
- Low Effective Output Capacitance (typ. Coss = 258 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a