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NVBG020N120SC1 Description

Silicon Carbide (SiC) MOSFET 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1.

NVBG020N120SC1 Key Features

  • Typ. RDS(on) = 20 mW
  • Ultra Low Gate Charge (typ. QG(tot) = 220 nC)
  • Low Effective Output Capacitance (typ. Coss = 258 pF)
  • 100% Avalanche Tested
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Halide Free and RoHS pliant with exemption 7a