• Part: NVBG040N120M3S
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 226.18 KB
Download NVBG040N120M3S Datasheet PDF
onsemi
NVBG040N120M3S
Features - Typ. RDS(on) = 40 m W @ VGS = 18 V - Ultra Low Gate Charge (QG(tot) = 75 n C) - High Speed Switching with Low Capacitance (Coss = 80 p F) - 100% Avalanche Tested - AEC- Q101 Qualified and PPAP Capable - This Device is Halide Free and Ro HS pliant with exemption 7a, Pb- Free 2LI (on second level interconnection) Typical Applications - Automotive On Board Charger - Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - 10/+22 V Remended Operation Values TC < 175°C VGSop - 3/+18 V of Gate- to- Source Voltage Continuous Drain Steady TC = 25°C Current (Notes 2, 3) State Power Dissipation (Note 2) 263 W Continuous Drain Steady TC = 100°C Current (Notes 2, 3) State Power Dissipation (Note 2) 131 W Pulsed Drain Current (Note...