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NVBG040N120SC1 - N-Channel MOSFET

Key Features

  • Typ. RDS(on) = 40 mW.
  • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC).
  • Low Effective Output Capacitance (Typ. Coss = 139 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60 A Drain (TAB) Features • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ.