NVBG1000N170M1 Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L NVBG1000N170M1.
NVBG1000N170M1 Key Features
- Typ. RDS(on) = 960 mW @ VGS = 20 V
- Ultra Low Gate Charge (QG(tot) = 14 nC)
- High Speed Switching with Low Capacitance (Coss = 11 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a