NVBG1000N170M1
NVBG1000N170M1 is SiC MOSFET manufactured by onsemi.
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
Features
- Typ. RDS(on) = 960 mW @ VGS = 20 V
- Ultra Low Gate Charge (QG(tot) = 14 nC)
- High Speed Switching with Low Capacitance (Coss = 11 pF)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Flyback Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
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