• Part: NVBG1000N170M1
  • Manufacturer: onsemi
  • Size: 370.27 KB
Download NVBG1000N170M1 Datasheet PDF
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NVBG1000N170M1 Description

Silicon Carbide (SiC) MOSFET EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L NVBG1000N170M1.

NVBG1000N170M1 Key Features

  • Typ. RDS(on) = 960 mW @ VGS = 20 V
  • Ultra Low Gate Charge (QG(tot) = 14 nC)
  • High Speed Switching with Low Capacitance (Coss = 11 pF)
  • 100% Avalanche Tested
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Halide Free and RoHS pliant with exemption 7a