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NVBG110N65S3F Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

Overview

MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 110 mW, 30.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 93 mW.
  • Ultra Low Gate Charge (Typ. Qg = 58 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 553 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

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