NVC040N120SC1 Overview
Silicon Carbide (SiC) MOSFET uses a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVC040N120SC1 Key Features
- 1200 V @ TJ = 175°C
- Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A
- High Speed Switching with Low Capacitance
- 100% UIL Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a