NVC080N120SC1 Overview
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Key Features
- 1200 V @ TJ = 175°C
- Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A
- High Speed Switching with Low Capacitance
- 100% UIL Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
