NVCR4LS1D7N08M7A Description
MOSFET Power, N-Channel 80 V, 1.75 mW NVCR4LS1D7N08M7A.
NVCR4LS1D7N08M7A Key Features
- Typical RDS(on) = 1.31 mW at VGS = 10 V
- Typical Qg(tot) = 130 nC at VGS = 10 V
- AEC-Q101 Qualified
- RoHS pliant
- Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test contact precision attainable
- Rev. 0
- 55 to +175 0.42 43