NVCR4LS3D6N08M7A Overview
MOSFET Power, N-Channel 80 V, 3.6 mW NVCR4LS3D6N08M7A.
NVCR4LS3D6N08M7A Key Features
- Typical RDS(on) = 2.8 mW at VGS = 10 V
- Typical Qg(tot) = 68 nC at VGS = 10 V
- AEC-Q101 Qualified
- RoHS pliant
- RDS(on)
- Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test contact precision attainable
- Rev. 0
- 55 to +175 0.66 52