NVCR4LS3D6N08M7A - N-Channel MOSFET

Features

Typical RDS(on) = 2.8 mW at VGS = 10 V.
Typical Qg(tot) = 68 nC at VGS = 10 V.
AEC.
Q101 Qualified.
RoHS Compliant.

ON Semiconductor

Datasheet Details

Part number	NVCR4LS3D6N08M7A
Manufacturer	ON Semiconductor
File Size	385.23 KB
Description	N-Channel MOSFET
Datasheet	NVCR4LS3D6N08M7A Datasheet
Additional preview pages of the NVCR4LS3D6N08M7A datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 3.6 mW NVCR4LS3D6N08M7A Features • Typical RDS(on) = 2.8 mW at VGS = 10 V • Typical Qg(tot) = 68 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2768 3810 × 2463.8 3790 ±15 × 2443.8 ±15 3606.3 × 2236.4 359.9 × 517.5 101.6 ±19.1 ORDERING INFORMATION Device NVCR4LS3D6N08M7A Package Wafer Sawn on Foil RECOMMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 40 to 66% The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C.

Published: Jun 28, 2022 |