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NVCR8LS025N65S3A - N-Channel Power MOSFET

Key Features

  • Typical RDS(on) = 19.9 mW at VGS = 10 V.
  • Typical Qg(tot) = 236 nC at VGS = 10 V.
  • AEC.
  • Q101 Qualified.
  • RoHS Compliant.

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MOSFET – Power, N-Channel, Automotive, SUPERFET) III, Easy-Drive 650 V, 25 mW NVCR8LS025N65S3A Features • Typical RDS(on) = 19.9 mW at VGS = 10 V • Typical Qg(tot) = 236 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness 10830 x 7610 10810 ±30 x 7590 ±30 (10155 x 3346) x 2 406 x 618 203.2 ± 25.4 Gate and Source : AlSiCu Drain : Ti−NiV−Ag (back side of die) Passivation : SiN Wafer Diameter : 8 inch Wafer sawn on UV Tape Bad dice identified in Inking Gross Die Count : 296 DIE DATA SHEET www.onsemi.