NVCR8LS025N65S3A
NVCR8LS025N65S3A is N-Channel Power MOSFET manufactured by onsemi.
MOSFET
- Power, N-Channel, Automotive, SUPERFET) III, Easy-Drive
650 V, 25 mW
Features
- Typical RDS(on) = 19.9 mW at VGS = 10 V
- Typical Qg(tot) = 236 nC at VGS = 10 V
- AEC- Q101 Qualified
- RoHS pliant
DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness
10830 x 7610 10810 ±30 x 7590 ±30 (10155 x 3346) x 2 406 x 618 203.2 ± 25.4
Gate and Source : AlSiCu Drain : Ti- NiV- Ag (back side of die) Passivation : SiN Wafer Diameter : 8 inch Wafer sawn on UV Tape Bad dice identified in Inking Gross Die Count : 296
DIE DATA SHEET .onsemi.
ORDERING INFORMATION
Device NVCR8LS025N65S3A
Package Wafer Sawn on Foil
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