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NTD14N03R, NVD14N03R
Power MOSFET
14 A, 25 V, N−Channel DPAK
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C, Chip − Continuous @ TA = 25°C, Limited by
NVD14N03R Datasheet
