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NVD20N03L27 - Power MOSFET

Key Features

  • Ultra.
  • Low RDS(on), Single Base, Advanced Technology.
  • SPICE Parameters Available.
  • Diode is Characterized for use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperatures.
  • High Avalanche Energy Specified.
  • ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0.
  • NVD Prefix for Automotive and Other.

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Full PDF Text Transcription (Reference)

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NTD20N03L27, NVD20N03L27 MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery.