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NVD360N65S3 - N-Channel MOSFET

Datasheet Summary

Features

  • Ultra Low Gate Charge & Low Effective Output Capacitance.
  • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – NVD360N65S3

Datasheet Details

Part number NVD360N65S3
Manufacturer ON Semiconductor
File Size 265.70 KB
Description N-Channel MOSFET
Datasheet download datasheet NVD360N65S3 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 360 mW, 10 A NVD360N65S3 Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max.
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