NVD360N65S3 Description
MOSFET Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 360 mW, 10 A NVD360N65S3.
NVD360N65S3 Key Features
- Ultra Low Gate Charge & Low Effective Output Capacitance
- Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- DC VGSS
- AC (f > 1 Hz) VGSS
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 3) IDM