NVD360N65S3 - N-Channel MOSFET

onsemi

Key Features

Ultra Low Gate Charge & Low Effective Output Capacitance.
Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
These Devices are Pb.
Free and are RoHS Compliant.

NVD360N65S3 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NVD360N65S3
Manufacturer	onsemi
File Size	265.70 KB
Description	N-Channel MOSFET
Datasheet	NVD360N65S3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 360 mW, 10 A NVD360N65S3 Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max.