NVD5807N Description
NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK.
NVD5807N Key Features
- Low RDS(on)
- High Current Capability
- Avalanche Energy Specified
- AEC-Q101 Qualified and PPAP Capable
- NVD5807N
- These Devices are Pb-Free and are RoHS pliant