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NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable − NVD5807N • These Devices are Pb−Free and are RoHS Compliant
Applications
• CCFL Backlight • DC Motor Control • Class D Amplifier • Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS)
VGS
"30
V
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation (RqJC) (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
23
A
16
33
W
Pulsed Drain Current
tp = 10 ms
ID
NVD5807N Datasheet
