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MOSFET – Power, N-Channel, Logic Level
100 V, 25 A, 50 mW
NVD6495NL
Features
• Low RDS(on) • 100% Avalanche Tested • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Continuous Drain
Steady TC = 25°C
ID
Current
State
TC = 100°C
25
A
18
Power Dissipation
Steady TC = 25°C
PD
State
83
W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
80
A
TJ, Tstg −55 to °C +175
Source Current (Body Diode)
IS
Single Pulse Drain−to−Source Avalanche
EAS
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.
NVD6495NL Datasheet
