NVDD5894NLT4G Datasheet | onsemi

NVDD5894NL Power MOSFET 40 V, 10 m W, 64 A, Dual N- Channel DPAK- 5L Features - Low RDS(on) to Minimize Conduction Losses - High Current Capability - Avalanche Energy Specified - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JC (Notes 1 & 3) Power Dissipation (Note 1) Rq JC Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesnt1R, 2q J&A 3) Power (Notes Dissipation 1 & 2) Rq JA Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS...