NVH4L110N65S3F Overview
MOSFET Single N-Channel, SUPERFET) III, FRFET) 650 V, 30 A, 110 mW NVH4L110N65S3F.
NVH4L110N65S3F Key Features
- Ultra Low Gate Charge & Low Effective Output Capacitance
- Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- DC VGSS
- AC (f > 1 Hz) VGSS
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 3) IDM
- Derate Above 25°C PD