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NVHL020N120SC1 Description

MOSFET - SiC Power, Single N-Channel NVHL020N120SC1 1200 V, 20 mW, 103.

NVHL020N120SC1 Key Features

  • Typ. RDS(on) = 20 mW
  • Ultra Low Gate Charge (typ. QG(tot) = 203 nC)
  • Low Effective Output Capacitance (typ. Coss = 260 pF)
  • 100% UIL Tested
  • Qualified According to AEC-Q101
  • These Devices are RoHS pliant