NVHL080N120SC1 Datasheet N-channel Silicon Carbide MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L.

Datasheet Details

Part number	NVHL080N120SC1
Manufacturer	onsemi
File Size	358.16 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	NVHL080N120SC1-ONSemiconductor.pdf

Key Features

Typ. RDS(on) = 80 mW.
Ultra Low Gate Charge (typ. QG(tot) = 56 nC).
Low Effective Output Capacitance (typ. Coss = 80 pF).
100% UIL Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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