NVHL080N120SC1
NVHL080N120SC1 is N-Channel Silicon Carbide MOSFET manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- 80 mohm, 1200 V, M1, TO-247-3L
Features
- Typ. RDS(on) = 80 mW
- Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
- Low Effective Output Capacitance (typ. Coss = 80 pF)
- 100% UIL Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Automotive On Board Charger
- Automotive DC- DC converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
- 15/+25...
