NVJS4151P Description
NVJS4151P MOSFET Power, Single P-Channel, Trench, SC-88 -20 V, -4.1.
NVJS4151P Key Features
- Leading Trench Technology for Low RDS(ON) Extending Battery Life
- SC-88 Small Outline (2x2 mm) for Maximum Circuit Board
- Gate Diodes for ESD Protection
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS