NVLJD4007NZ Datasheet | onsemi

MOSFET - Dual, N-Channel, Small Signal, Gate ESD Protection, 2x2 WDFN 30 V, 245 mA Features - Optimized Layout for Excellent High Speed Signal Integrity - Low Gate Charge for Fast Switching - Small 2 x 2 mm Footprint - ESD Protected Gate - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current (Note 1) Steady State = 25°C VDSS VGS ID "10 V 245 mA Power Dissipation (Note 1) Steady State = 25°C 755 mW Pulsed Drain Current tP v 10 ms Operating Junction and Storage...