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NVMFD5873NL
Power MOSFET
60 V, 13 mW, 58 A, Dual N−Channel Logic Level, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5873NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJ−mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJ−mb (Notes 1, 2, 3)
Tmb = 100°C
58
A
41
107 W 54
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 3 & 4)
Steady TA = 100°C
P
NVMFD5873NL Datasheet
