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MOSFET – Power, Dual N-Channel
60 V, 28 mW, 20 A
NVMFD5C680NL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C680NLWF − Wettable Flank Option for Enhanced
Optical Inspection
• AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power Dissipation RqJC (Notes 1, 2)
TC = 25 °C
ID
Steady TC = 100 °C
State TC = 25 °C
PD
TC = 100 °C
20
A
15
24
W
12
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 2
NVMFD5C680NL Datasheet
